型号:

BSC080N03LS G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 30V 53A TDSON-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BSC080N03LS G PDF
产品目录绘图 Mosfets TDSON-8
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 53A
开态Rds(最大)@ Id, Vgs @ 25° C 8 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大) 2.2V @ 250µA
闸电荷(Qg) @ Vgs 21nC @ 10V
输入电容 (Ciss) @ Vds 1700pF @ 15V
功率 - 最大 35W
安装类型 表面贴装
封装/外壳 8-PowerTDFN
供应商设备封装 PG-TDSON-8(5.15x6.15)
包装 标准包装
产品目录页面 1619 (CN2011-ZH PDF)
其它名称 BSC080N03LSGINDKR
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